Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6646
Título: Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
Autor: Kiazadeh, A.
Rocha, P. R.
Chen, Q.
Gomes, Henrique L.
Data: 2011
Editora: Springer-Verlag
Resumo: It is demonstrated that planar structures based on silver nanoparticleshosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6646
DOI: https://dx.doi.org/10.1007/978-3-642-19170-1_65
ISBN: 978-3-642-19170-1
ISSN: 1868-4238
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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