Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6650
Título: Schottky barrier diodes from semiconducting polymers
Autor: Gomes, Henrique L.
Taylor, D. M.
Data: 1997
Editora: Institution of Engineering and Technology
Resumo: Schottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electrical behaviour investigated. I-V characteristics revealed a dependence on the fabrication conditions, specifically on the time under vacuum prior to evaporation of the rectifying contact and post-metal annealing at elevated temperature. The available evidence is consistent with the formation of a thin insulating layer between the metal and the polymer following these procedures. Long periods under vacuum prior to deposition of the aluminium electrode reduced the likelihood of such a layer forming. Capacitance-voltage plots of the devices were stable to voltage cycling, so long as the forward voltage did not exceed similar to 1 V. Above this a small degree of hysteresis was observed, which is attributed to the filling/emptying of interface states or traps in the polymer.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6650
DOI: https://dx.doi.org/10.1049/ip-cds:19971003
ISSN: 1350-2409
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

Ficheiros deste registo:
Ficheiro Descrição TamanhoFormato 
Schottky barrier diodes from semiconducting polymers.pdf740,42 kBAdobe PDFVer/Abrir    Acesso Restrito. Solicitar cópia ao autor!

FacebookTwitterDeliciousLinkedInDiggGoogle BookmarksMySpace
Formato BibTex MendeleyEndnote 

Todos os registos no repositório estão protegidos por leis de copyright, com todos os direitos reservados.