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- Planar non-volatile memory based on metal nanoparticlesPublication . Kiazadeh, Asal; Gomes, Henrique L.; Costa, Ana M. Rosa da; Rocha, P. R. F.; Chen, Q.; Moreira, José; De Leeuw, Dago M.; Meskers, S. C. J.Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.
- Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structurePublication . Rocha, P. R. F.; Gomes, Henrique L.; Vandamme, L. K. J.; Chen, Q.; Kiazadeh, Asal; De Leeuw, Dago M.; Meskers, S. C. J.Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10−21 cm2/Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.