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Publicação
Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure
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Orientador(es)
Resumo(s)
Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian
motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has
an estimated value of 10−21 cm2/Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.
Descrição
Palavras-chave
Diffusion noise Electrical properties Lowfrequency noise Nonvolatile memory Random telegraph noise Resistive switching
Contexto Educativo
Citação
Rocha, P. R. F.; Gomes, H. L.; Vandamme, L. K. J.; Chen, Q.; Kiazadeh, A.; De Leeuw, D. M.; Meskers, S. C.J. Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure, IEEE Transactions on Electron Devices, 59, 9, 2483-24, 2012.
Editora
Institute of Electrical and Electronics Engineers (IEEE)