| Nome: | Descrição: | Tamanho: | Formato: | |
|---|---|---|---|---|
| 893.62 KB | Adobe PDF |
Orientador(es)
Resumo(s)
Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias
voltages near 15 V undergo a change to a nonvolatile memory known as
electroforming. Prior to electroforming, electron trapping occurs, followed by a
tunneling current due to electrons from the polymer into LiF. At the onset
voltage for electroforming, a sudden electroluminescence burst originating from
electronic excitations in the polymer is detected. This confirms that hole injection
into the polymer through LiF occurs leading to nonvolatile resistive switching.
Descrição
Palavras-chave
Contexto Educativo
Citação
Bory, B.F.; Gomes, H.L.; Janssen, R.A.J.; De Leeuw, D.M.; Meskers, S.C.J.Role of hole injection in electroforming of LiF-polymer memory diodes, Journal of Physical Chemistry C, 116, 23, 12443-12, 2012.
