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Role of hole injection in electroforming of LiF-polymer memory diodes

2012Journal article Restricted access
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dc.contributor.authorBory, Benjamin F.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorJanssen, R. A. J.
dc.contributor.authorDe Leeuw, Dago M.
dc.contributor.authorMeskers, S. C. J.
dc.date.accessioned2015-10-28T13:51:40Z
dc.date.available2015-10-28T13:51:40Z
dc.date.issued2012
dc.date.updated2015-09-22T11:31:21Z
dc.description.abstractAl/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.pt_PT
dc.identifier.citationBory, B.F.; Gomes, H.L.; Janssen, R.A.J.; De Leeuw, D.M.; Meskers, S.C.J.Role of hole injection in electroforming of LiF-polymer memory diodes, Journal of Physical Chemistry C, 116, 23, 12443-12, 2012.pt_PT
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6946
dc.language.isoengpt_PT
dc.publisherACS Publicationspt_PT
dc.titleRole of hole injection in electroforming of LiF-polymer memory diodespt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage12447pt_PT
oaire.citation.startPage12443pt_PT
oaire.citation.titleJournal of Physical Chemistry Cpt_PT
oaire.citation.volume116pt_PT
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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