Metal contacts in thin-film transistors

Stallinga, Peter; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6651

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Autores

Stallinga, Peter

Gomes, Henrique L.

Resumo(s)

The effects of metal contacts on the electrical characteristics in thin-film transistors are discussed. It is found that the effects of these contacts are twofold. First, a constant potential that can range from zero to some volts (half the bandgap) is added to the entire channel. Second, a residual barrier is formed with a height that depends on the bias, and is in the order of tens of meV when a current is present. It is shown that these predicted effects are in agreement with experimental observations. (c) 2006 Elsevier B.V. All rights reserved.

URI

http://hdl.handle.net/10400.1/6651

Editora

Elsevier

DOI

https://dx.doi.org/10.1016/j.orgel.2006.11.004

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

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