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Metal contacts in thin-film transistors

dc.contributor.authorStallinga, Peter
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:48Z
dc.date.available2015-06-26T14:18:48Z
dc.date.issued2007
dc.description.abstractThe effects of metal contacts on the electrical characteristics in thin-film transistors are discussed. It is found that the effects of these contacts are twofold. First, a constant potential that can range from zero to some volts (half the bandgap) is added to the entire channel. Second, a residual barrier is formed with a height that depends on the bias, and is in the order of tens of meV when a current is present. It is shown that these predicted effects are in agreement with experimental observations. (c) 2006 Elsevier B.V. All rights reserved.
dc.identifier.doihttps://dx.doi.org/10.1016/j.orgel.2006.11.004
dc.identifier.issn1566-1199
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6651
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier
dc.relation.isbasedonP-004-8MM
dc.titleMetal contacts in thin-film transistors
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage304
oaire.citation.startPage300
oaire.citation.titleOrganic Electronics
oaire.citation.volume8
person.familyNameStallinga
person.familyNameGomes
person.givenNamePeter
person.givenNameHenrique Leonel
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0002-9581-6875
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701332987
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscoverya81fc5fb-94ec-4160-bfdc-ea33cfdbf216

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