Electronic levels in MEH-PPV

Stallinga, Peter; Gomes, Henrique L.; Rost, H.; Holmes, A. B.; Harrison, M. G.; Friend, R. H.

http://hdl.handle.net/10400.1/6602

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Abstract(s)

pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states. (C) 2000 Published by Elsevier Science S.A. All rights reserved.