Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization

Stallinga, Peter; Gomes, Henrique L.; Rost, H.; Holmes, A. B.; Harrison, M. G.; Friend, R. H.

http://hdl.handle.net/10400.1/6595

Utilize este identificador para referenciar este registo.

Nome:	Descrição:	Tamanho:	Formato:
Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization.pdf		682.19 KB	Adobe PDF	Ver/Abrir

Contacte-nos

Autores

Resumo(s)

Electrical measurements have been performed on poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included current-voltage measurements, capacitance-voltage measurements, capacitance-transient spectroscopy, and admittance spectroscopy. The measurements show evidence for large minority-carrier injection into the polymer possibly enabled by interface states for which evidence is also found. The shallow acceptor level depth (0.12 eV) and four deep trap level activation energies (0.30 and 1.0 eV majority-carrier type; 0.48 and 1.3 eV minority-carrier type) are found. Another trap that is visible at room temperature has point-defect nature. (C) 2001 American Institute of Physics.

URI

http://hdl.handle.net/10400.1/6595

Editora

American Institute of Physics

DOI

https://dx.doi.org/10.1063/1.1334634

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

Métricas Alternativas

Ver registo completo