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Gate-bias stress in amorphous oxide semiconductors thin-film transistors

2009Journal article Open access
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dc.contributor.authorLopes, M. E.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorMedeiros, M. C. R.
dc.contributor.authorBarquinha, P.
dc.contributor.authorPereira, L. M. C.
dc.contributor.authorFortunato, E.
dc.contributor.authorMartins, R.
dc.contributor.authorFerreira, I.
dc.date.accessioned2013-12-17T10:13:56Z
dc.date.available2013-12-17T10:13:56Z
dc.date.issued2009
dc.date.updated2013-12-13T13:52:05Z
dc.description.abstractA quantitative study of the dynamics of threshold-voltage shifts with time in gallium-indium zinc oxide amorphous thin-film transistors is presented using standard analysis based on the stretched exponential relaxation. For devices using thermal silicon oxide as gate dielectric, the relaxation time is 3 105 s at room temperature with activation energy of 0.68 eV. These transistors approach the stability of the amorphous silicon transistors. The threshold voltage shift is faster after water vapor exposure suggesting that the origin of this instability is charge trapping at residual-water-related trap sites.por
dc.identifier.citationLopes, M. E.; Gomes, H. L.; Medeiros, M. C. R.; Barquinha, P.; Pereira, L. M. C.; Fortunato, E.; Martins, R.; Ferreira, I. Gate-bias stress in amorphous oxide semiconductors thin-film transistors, Applied Physics Letters, 95, 6, 0635021-0635023, 2009.por
dc.identifier.doihttp://dx.doi.org/10.1063/1.3187532
dc.identifier.issn0003-6951
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/3251
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherAmerican Institute of Physics AIPpor
dc.relationHigh mobility transparent amorphous oxide semiconductors thin film transistors for active matrix displays
dc.relationMultifunctional Oxides: a Novel Approach for Low temperature Integration of oxide Semiconductors as Active and passive thin films in the future generation of electronic systems-MONALISA
dc.titleGate-bias stress in amorphous oxide semiconductors thin-film transistorspor
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleHigh mobility transparent amorphous oxide semiconductors thin film transistors for active matrix displays
oaire.awardTitleMultifunctional Oxides: a Novel Approach for Low temperature Integration of oxide Semiconductors as Active and passive thin films in the future generation of electronic systems-MONALISA
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FEEA-ELC%2F64975%2F2006/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FCTM%2F73943%2F2006/PT
oaire.citation.endPage0635023por
oaire.citation.issue6por
oaire.citation.issueNA
oaire.citation.startPage0635021por
oaire.citation.titleApplied Physics Letterspor
oaire.citation.volume95por
oaire.fundingStream3599-PPCDT
oaire.fundingStream3599-PPCDT
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccesspor
rcaap.typearticlepor
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relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c
relation.isProjectOfPublication53f31e06-7b15-409f-87f7-67db3cbde876
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