Electrical characterization of pn-junctions of PPV and silicon

Stallinga, Peter; Gomes, Henrique L.; Charas, A.; Morgado, J.; Alcacer, L.

http://hdl.handle.net/10400.1/6644

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Abstract(s)

Poly(phenylene vinylene) (PPV) grown via the precursor route, deposited on top of heavily doped n-type silicon, was studied using electrical measurement techniques. The results are compared to PPV grown via deposition of soluble derivative (MEH-PPV). The two types are very similar. They have comparable free carrier densities and both show minority-carrier effects. The activation energy found via the loss tangent is 0.13 eV. The effect of exposure to oxygen is visible in the capacitance and the current.

URI

http://hdl.handle.net/10400.1/6644

Publisher

Elsevier

DOI

https://dx.doi.org/10.1016/S0379-6779(00)01174-7

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