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Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure

2012Journal article Restricted
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dc.contributor.authorRocha, P. R. F.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorVandamme, L. K. J.
dc.contributor.authorChen, Q.
dc.contributor.authorKiazadeh, Asal
dc.contributor.authorDe Leeuw, Dago M.
dc.contributor.authorMeskers, S. C. J.
dc.date.accessioned2013-12-18T09:21:30Z
dc.date.available2013-12-18T09:21:30Z
dc.date.issued2012
dc.date.updated2013-12-16T22:01:27Z
dc.description.abstractLow-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10−21 cm2/Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.por
dc.identifier.citationRocha, P. R. F.; Gomes, H. L.; Vandamme, L. K. J.; Chen, Q.; Kiazadeh, A.; De Leeuw, D. M.; Meskers, S. C.J. Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure, IEEE Transactions on Electron Devices, 59, 9, 2483-24, 2012.por
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2012.2204059
dc.identifier.issn0018-9383
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/3260
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)por
dc.subjectDiffusion noisepor
dc.subjectElectrical propertiespor
dc.subjectLowfrequency noisepor
dc.subjectNonvolatile memorypor
dc.subjectRandom telegraph noisepor
dc.subjectResistive switchingpor
dc.titleLow-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structurepor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage2487por
oaire.citation.issue8por
oaire.citation.startPage2483por
oaire.citation.titleIEEE Transactions on Electron Devicespor
oaire.citation.volume59por
person.familyNameGomes
person.familyNameKiazadeh
person.givenNameHenrique Leonel
person.givenNameAsal
person.identifier.ciencia-id0B15-2FBD-E1BA
person.identifier.orcid0000-0003-3664-4740
person.identifier.orcid0000-0002-8422-5762
person.identifier.ridK-3193-2016
person.identifier.scopus-author-id7005305880
person.identifier.scopus-author-id36702810600
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication7fb0adba-ec53-445a-81ca-0ce11c13da48
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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