Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor

Rocha, Paulo R. F.; Kiazadeh, Asal; Chen, Q.; Gomes, Henrique L.

http://hdl.handle.net/10400.1/3314

Utilize este identificador para referenciar este registo.

Nome:	Descrição:	Tamanho:	Formato:
Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor - Springer.pdf		254.89 KB	Adobe PDF	Ver/Abrir

Contacte-nos

Autores

Resumo(s)

Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.

Palavras-chave

Resistive Random Access Memory (RRAM) Switching Electrical Bistability Non-Volatile Memory Negative Differential Resistance (NDR)

URI

http://hdl.handle.net/10400.1/3314

Citação

Rocha, P. R. F.; Kiazadeh, A.; Chen, Q.; Gomes, H. L. Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor, IFIP Advances in Information and Communication Technology, 372 A, NA, 535-540, 2012.

Editora

Springer

DOI

http://dx.doi.org/10.1007/978-3-642-28255-3_59

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

Métricas Alternativas

Ver registo completo