Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

Bory, Benjamin F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, Henrique L.; De Leeuw, Dago M.

http://hdl.handle.net/10400.1/3286

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Abstract(s)

Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For bias voltages below 6 V, the number of trapped electrons is found to be CoxideV/q with Coxide as the geometrical capacitance of the oxide layer. This implies a density of traps for the electrons at the polymer-metal oxide interface larger than 31017 m−2.

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http://hdl.handle.net/10400.1/3286

Citation

Bory, B. F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, H. L.; De Leeuw, D. M. Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming, Applied Physics Letters, 97, 22, 222106-1-222106-3, 2010.