Repository logo
 
Publication

Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

dc.contributor.authorBory, Benjamin F.
dc.contributor.authorMeskers, S. C. J.
dc.contributor.authorJanssen, R. A. J.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorDe Leeuw, Dago M.
dc.date.accessioned2014-01-07T11:13:10Z
dc.date.available2014-01-07T11:13:10Z
dc.date.issued2010
dc.date.updated2014-01-02T18:50:11Z
dc.description.abstractMetal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For bias voltages below 6 V, the number of trapped electrons is found to be CoxideV/q with Coxide as the geometrical capacitance of the oxide layer. This implies a density of traps for the electrons at the polymer-metal oxide interface larger than 31017 m−2.por
dc.identifier.citationBory, B. F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, H. L.; De Leeuw, D. M. Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming, Applied Physics Letters, 97, 22, 222106-1-222106-3, 2010.por
dc.identifier.doihttp://dx.doi.org/10.1063/1.3520517
dc.identifier.issn0003-6951
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/3286
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherAmerican Institute of Physicspor
dc.titleTrapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroformingpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage222106-3por
oaire.citation.issue22por
oaire.citation.startPage222106-1por
oaire.citation.titleApplied Physics Letterspor
oaire.citation.volume97por
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsopenAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

Files

Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
2010 Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming APL.pdf
Size:
158.95 KB
Format:
Adobe Portable Document Format
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description: