Publication
Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming
dc.contributor.author | Bory, Benjamin F. | |
dc.contributor.author | Meskers, S. C. J. | |
dc.contributor.author | Janssen, R. A. J. | |
dc.contributor.author | Gomes, Henrique L. | |
dc.contributor.author | De Leeuw, Dago M. | |
dc.date.accessioned | 2014-01-07T11:13:10Z | |
dc.date.available | 2014-01-07T11:13:10Z | |
dc.date.issued | 2010 | |
dc.date.updated | 2014-01-02T18:50:11Z | |
dc.description.abstract | Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For bias voltages below 6 V, the number of trapped electrons is found to be CoxideV/q with Coxide as the geometrical capacitance of the oxide layer. This implies a density of traps for the electrons at the polymer-metal oxide interface larger than 31017 m−2. | por |
dc.identifier.citation | Bory, B. F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, H. L.; De Leeuw, D. M. Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming, Applied Physics Letters, 97, 22, 222106-1-222106-3, 2010. | por |
dc.identifier.doi | http://dx.doi.org/10.1063/1.3520517 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.other | AUT: HGO00803; | |
dc.identifier.uri | http://hdl.handle.net/10400.1/3286 | |
dc.language.iso | eng | por |
dc.peerreviewed | yes | por |
dc.publisher | American Institute of Physics | por |
dc.title | Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming | por |
dc.type | journal article | |
dspace.entity.type | Publication | |
oaire.citation.endPage | 222106-3 | por |
oaire.citation.issue | 22 | por |
oaire.citation.startPage | 222106-1 | por |
oaire.citation.title | Applied Physics Letters | por |
oaire.citation.volume | 97 | por |
person.familyName | Gomes | |
person.givenName | Henrique Leonel | |
person.identifier.orcid | 0000-0003-3664-4740 | |
person.identifier.scopus-author-id | 7005305880 | |
rcaap.rights | openAccess | por |
rcaap.type | article | por |
relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
relation.isAuthorOfPublication.latestForDiscovery | 6da677b9-927f-423d-8657-448a0dccb67c |
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