Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3314
Título: Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
Autor: Rocha, P. R. F.
Kiazadeh, A.
Chen, Q.
Gomes, Henrique L.
Palavras-chave: Resistive Random Access Memory (RRAM)
Switching
Electrical Bistability
Non-Volatile Memory
Negative Differential Resistance (NDR)
Data: 2012
Editora: Springer
Citação: Rocha, P. R. F.; Kiazadeh, A.; Chen, Q.; Gomes, H. L. Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor, IFIP Advances in Information and Communication Technology, 372 A, NA, 535-540, 2012.
Resumo: Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3314
DOI: http://dx.doi.org/10.1007/978-3-642-28255-3_59
Versão do Editor: http://link.springer.com/chapter/10.1007/978-3-642-28255-3_59
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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