Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6595
Título: Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization
Autor: Stallinga, Peter
Gomes, Henrique L.
Rost, H.
Holmes, A. B.
Harrison, M. G.
Friend, R. H.
Data: 2001
Editora: American Institute of Physics
Resumo: Electrical measurements have been performed on poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included current-voltage measurements, capacitance-voltage measurements, capacitance-transient spectroscopy, and admittance spectroscopy. The measurements show evidence for large minority-carrier injection into the polymer possibly enabled by interface states for which evidence is also found. The shallow acceptor level depth (0.12 eV) and four deep trap level activation energies (0.30 and 1.0 eV majority-carrier type; 0.48 and 1.3 eV minority-carrier type) are found. Another trap that is visible at room temperature has point-defect nature. (C) 2001 American Institute of Physics.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6595
DOI: https://dx.doi.org/10.1063/1.1334634
ISSN: 0021-8979
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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