Thin-film field-effect transistors: The effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer-Neldel rule

Stallinga, Peter; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6600

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Autores

Stallinga, Peter

Gomes, Henrique L.

Resumo(s)

Based on the model of thin-film transistors in which the active layer is treated as two-dimensional, the effects of traps are studied. It is shown that when abundant discrete trap states are present, the field-effect mobility becomes temperature dependent. In case the traps are distributed exponentially in energy, a Meyer-Neldel rule for the temperature dependence of mobility and current results. When also the mobile states are distributed in energy, in the so-called band-tail states, the mobility is no longer thermally activated. (c) 2006 Elsevier B.V. All rights reserved.

URI

http://hdl.handle.net/10400.1/6600

Editora

Elsevier

DOI

https://dx.doi.org/10.1016/j.orgel.2006.10.003

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

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