Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6644
Título: Electrical characterization of pn-junctions of PPV and silicon
Autor: Stallinga, Peter
Gomes, Henrique L.
Charas, A.
Morgado, J.
Alcacer, L.
Data: 2001
Editora: Elsevier
Resumo: Poly(phenylene vinylene) (PPV) grown via the precursor route, deposited on top of heavily doped n-type silicon, was studied using electrical measurement techniques. The results are compared to PPV grown via deposition of soluble derivative (MEH-PPV). The two types are very similar. They have comparable free carrier densities and both show minority-carrier effects. The activation energy found via the loss tangent is 0.13 eV. The effect of exposure to oxygen is visible in the capacitance and the current.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6644
DOI: https://dx.doi.org/10.1016/S0379-6779(00)01174-7
ISSN: 0379-6779
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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