| dc.contributor.author | Chen, Q. | |
| dc.contributor.author | Gomes, Henrique L. | |
| dc.contributor.author | Kiazadeh, Asal | |
| dc.contributor.author | Rocha, Paulo R. F. | |
| dc.contributor.author | De Leeuw, Dago M. | |
| dc.contributor.author | Meskers, S. C. J. | |
| dc.date.accessioned | 2014-01-07T16:50:03Z | |
| dc.date.available | 2014-01-07T16:50:03Z | |
| dc.date.issued | 2012 | |
| dc.date.updated | 2014-01-03T10:04:10Z | |
| dc.description.abstract | Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics. | por |
| dc.identifier.citation | Chen, Q.; Gomes, H.L.; Kiazadeh, A.; Rocha, P.R.F.; De Leeuw, D.M.; Meskers, S.C.J.Electroforming process in metal-oxide-polymer resistive switching memories, IFIP Advances in Information and Communication Technology, 372 A, NA, 527-534, 2012. | por |
| dc.identifier.doi | http://dx.doi.org/10.1007/978-3-642-28255-3_58 | |
| dc.identifier.isbn | 978-3-642-28254-6 | |
| dc.identifier.other | AUT: HGO00803; | |
| dc.identifier.uri | http://hdl.handle.net/10400.1/3297 | |
| dc.language.iso | eng | por |
| dc.peerreviewed | yes | por |
| dc.publisher | Springer | por |
| dc.relation.publisherversion | http://link.springer.com/chapter/10.1007%2F978-3-642-28255-3_58# | por |
| dc.subject | Resistive random access memory (RRAM), | por |
| dc.subject | Electroforming soft-breakdown | por |
| dc.subject | Non-volatile memory | por |
| dc.title | Electroforming process in metal-oxide-polymer resistive switching memories | por |
| dc.type | book part | |
| dspace.entity.type | Publication | |
| oaire.citation.endPage | 534 | por |
| oaire.citation.startPage | 527 | por |
| oaire.citation.title | Technological Innovation for Value Creation, IFIP Advances in Information and Communication Technology | por |
| oaire.citation.volume | 372 | por |
| person.familyName | Gomes | |
| person.familyName | Kiazadeh | |
| person.familyName | Rocha | |
| person.givenName | Henrique Leonel | |
| person.givenName | Asal | |
| person.givenName | Paulo | |
| person.identifier | 534265 | |
| person.identifier.ciencia-id | 0B15-2FBD-E1BA | |
| person.identifier.ciencia-id | 2810-CAC1-6CA3 | |
| person.identifier.orcid | 0000-0003-3664-4740 | |
| person.identifier.orcid | 0000-0002-8422-5762 | |
| person.identifier.orcid | 0000-0002-8917-9101 | |
| person.identifier.rid | K-3193-2016 | |
| person.identifier.rid | L-1223-2015 | |
| person.identifier.scopus-author-id | 7005305880 | |
| person.identifier.scopus-author-id | 36702810600 | |
| person.identifier.scopus-author-id | 36773579600 | |
| rcaap.rights | openAccess | por |
| rcaap.type | bookPart | por |
| relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
| relation.isAuthorOfPublication | 7fb0adba-ec53-445a-81ca-0ce11c13da48 | |
| relation.isAuthorOfPublication | e7993271-11b1-4028-ac2e-88d631d67381 | |
| relation.isAuthorOfPublication.latestForDiscovery | 7fb0adba-ec53-445a-81ca-0ce11c13da48 |
