| Name: | Description: | Size: | Format: | |
|---|---|---|---|---|
| 255 KB | Microsoft Word |
Advisor(s)
Abstract(s)
Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.
Description
Keywords
Resistive random access memory (RRAM), Electroforming soft-breakdown Non-volatile memory
Citation
Chen, Q.; Gomes, H.L.; Kiazadeh, A.; Rocha, P.R.F.; De Leeuw, D.M.; Meskers, S.C.J.Electroforming process in metal-oxide-polymer resistive switching memories, IFIP Advances in Information and Communication Technology, 372 A, NA, 527-534, 2012.
Publisher
Springer